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李东 D.Li (Professor)

时间:2019-04-15  作者:  点击:[]

 

 

Dong Li, Professor        

College of Materials Science and Engineering, Hunan University.

 

Office: Nanostructure Center Building

E-mail: liidong@hnu.edu.cn

Address: yuelushan, Changsha, 410082, China.    

 

 

Prof. Li received his B.S. and Ph.D. degree from School of physical science and engineering, Tongji University in 2018. Afterwards, he joined the College of Materials Science and Engineering, Hunan University as a professor. His research interests include low-dimensional materials, devices and their applications in electronics and optoelectronics.

 

 

Selected Publications:

1. Dong Li; Mingyuan Chen; Zhengzong Sun; Peng Yu; Zheng Liu*; Pulickel Ajayan* and Zengxing Zhang*. Two-dimensional nonvolatile programmable p-n junctions. Nature Nanotechnology 2017, 12, 901-906.

2. Huawei Liu; Dong Li*; Chao Ma; Xuehong Zhang; Xingxia Sun; Chenguang Zhu; Biyuan Zheng; Zixing Zou; Ziyu Luo; Xiaoli Zhu*; Xiao Wang; Anlian Pan*, Van der Waals Epitaxial Growth of Vertically Stacked Sb2Te3/MoS2 p–n Heterojunctions for High Performance Optoelectronics, Nano Energy 2019, 59, 66-74.

3. Chenguang Zhu†; Xingxia Sun†; Huawei Liu; Biyuan Zheng; Xingwang Wang; Ying Liu; Zubair, Zubair; Xiao Wang; Xiaoli Zhu; Dong Li*; Anlian Pan*. Non-Volatile MoTe2 p-n Diodes for Optoelectronic Logics. ACS Nano 2019, 13, 7216-7222.

4. Liu, Huawei†; Zhu, Xiaoli†; Sun, Xingxia; Zhu, Chenguang; Huang, Wei; Zhang, Xuehong; Zheng, Biyuan; Zou, Zixing; Luo, Ziyu; Wang, Xiao; Li, Dong*; Pan, Anlian*. Self-Powered Broadband Photodetectors Based on Vertically Stacked WSe2/Bi2Te3 p-n Heterojunctions. ACS Nano 2019, 13, 13573-13580.

5. Dong Li; Mingyuan Chen; Qijun Zong; Zhang Zengxing*. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers. Nano Letters 2017, 17, 63536359.

 Dong Li; Xiaojuan Wang; Qichong Zhang; Liping Zou; Xiangfan Xu and Zengxing Zhang*. Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures. Advanced Functional Materials 2015, 25, 7360-7365.

6. Dong Li; Biao Wang; Mingyuan Chen; Jun Zhou and Zengxing Zhang*. Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics. Small 2017, 13, 1603726.

 7. Biyuan Zheng; Chao Ma; Dong Li; Jianyue Lan; Zhe Zhang; Xingxia Sun; Weihao Zheng; Tiefeng Yang; Chenguang Zhu; Gang Ouyang; Gengzhao Xu; Xiaoli Zhu; Xiao Wang and Anlian Pan*. Band Alignment Engineering in Two-Dimensional Lateral Heterostructures. JACS 2018, 140, 11193.

 

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